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Guided filament formation in NiO-resistive random access memory by embedding gold nanoparticles - art. no. 083105

  作者 Uenuma, M; Zheng, B; Kawano, K; Horita, M; Ishikawa, Y; Yamashita, I; Uraoka, Y  
  选自 期刊  Applied Physics Letters;  卷期  2012年100-8;  页码  83105-83105  
  关联知识点  
 

[摘要]Controllable positioning of conductive filament in resistive memory is demonstrated using gold nanoparticles (GNPs). A GNP of 15nm diameter is encapsulated by the porter protein and delivered to the designated positions. The restricted nanoscale filament

 
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