[摘要]：For the first time, we demonstrated photostable and dynamic rectification in ZnO nanowire (NW) Schottky diode circuits where two diodes are face-to-face connected in the same ZnO wire. With their properties improved by H-doping from atomic layer deposited Al2O3 passivation, our ZnO NW diode circuits stably operated at a maximum frequency of 100 Hz displaying a good rectification even under the lights. We thus conclude that our results promisingly appoached one-dimensional nanoelectronics.
