Bipolar resistive electrical switching of silver tetracyanoquinodimethane based memory cells with dedicated silicon dioxide "switching layer"

[摘要]：We demonstrate reliable and durable (>100 write/erase cycles) bipolar resistive electrical switching of silver tetracyanoquinodimethane (AgTCNQ) based memories by incorporating a dedicated SiO2 "switching layer" and limiting the on state current by a curr

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