Programming margin enlargement by material engineering for multilevel storage in phase-change memory

[摘要]：In this work, we investigate the effect of the material engineering on programming margin in the double-layered phase-change memory, which is the most important parameter for the stability of multilevel storage. Compared with the TiN/SbTeN cell, the TiSiN

[全文传递流程]：

一般上传文献全文的时限在1个工作日内