Influence of quantum-interference on the fringing-field magnetoresistance of hybrid ferromagnetic/semiconductor devices

[摘要]：We investigate magnetotransport in hybrid ferromagnetic devices, comprised of laterally confined semiconductor channels that are bridged by nanomagnets that generate magnetic barriers. We identify a regime of low-temperature behavior in these devices, in

[全文传递流程]：

一般上传文献全文的时限在1个工作日内