Enhancing the nucleation of palladium atomic layer deposition on Al2O3 using trimethylaluminum to prevent surface poisoning by reaction products

[摘要]：Metal atomic layer deposition (ALD) on oxides can display long nucleation periods and high growth temperatures that may be caused by surface poisoning by reaction products. Exposures of trimethylaluminum (TMA) during Pd ALD using Pd (hfac)(2) and formalin

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