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Catalyst patterned growth of interconnecting graphene layer on SiO2/Si substrate for integrated devices

  作者 Lee, YH; Lee, JH  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-14;  页码  143102-143102  
  关联知识点  
 

[摘要]The authors report a simple site selective growth for producing interconnecting suspended graphene on SiO2/Si substrate. The outcome of the process depends on the thickness of the catalyst (Ni) and process ambient on SiO2/Si wafer by low pressure fast hea

 
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