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Plasma etching: From micro- to nanoelectronics

  作者 Shamiryan, D.; Paraschiv, V.; Boullart, W.; Baklanov, M. R.  
  选自 期刊  HIGH ENERGY CHEMISTRY;  卷期  2009年43-3;  页码  204-212  
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[摘要]The role of plasma etching in the semiconductor technology upon switching from the microscale to the nanoscale dimensions is discussed. The continuing miniaturization has led to impossibility of simple scaling and further use of the conventional materials of silicon microelectronics. New materials and functional elements of integrated circuits call for revision of the existing plasma etching processes and development of novel processes. This situation brings plasma etching along with photolithography to the forefront of nanoelectronics technology.

 
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