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[摘要]:The role of plasma diagnostics in the progress of plasma technologies in micro- and nanoelectronics is elucidated. The use of various diagnostic techniques in resolving the problems of design optimization of plasma reactors, development of new industrial processes, and their monitoring is considered. It is shown that in situ plasma diagnostics makes it possible to determine not only the end of the processes but also the rate of plasma etching of microelectronic structures and process selectivity. |
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