Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells

[摘要]：InGaN/GaN light-emitting diodes (LEDs) with graded-thickness multiple quantum wells (GQW) was designed and grown by metal-organic chemical vapor deposition. The GQW structure, in which the well-thickness increases along [0001] direction, was found to have

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