Tuning Quantum Corrections and Magnetoresistance in ZnO Nanowires by Ion Implantation

[摘要]：Using ion implantation, the electrical as well as the magnetotransport properties of individual ZnO nanowires (NWs) can be tuned. The virgin NWs are configured as field-effect transistors which are in the enhancement mode. Al-implanted NWs reveal a three-

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