Tunable Catalytic Alloying Eliminates Stacking Faults in Compound Semiconductor Nanowires

[摘要]：Planar defects in compound (III-V and II-VI) semiconductor nanowires (NWs), such as twin and stacking faults, are universally formed during the catalytic NW growth, and they detrimentally act as static disorders against coherent electron transport and lig

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