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[摘要]：We report on the low-frequency noise (LFN) properties of tunneling field effect transistors (TFETs) fabricated on silicon-on-insulator substrate. Unlike conventional large FETs, where LFN obeys a 1/f frequency dependence, in large TFETs the LFN is dominated by random telegraph signal (RTS) noise characterized by 1/f(2) slope. We explain this unique LFN behavior by the local junction control of the tunneling drain current, which involves few traps in a small area. The origin of RTS noise is corroborated by the gate length independence of the I-D-V-GS characteristics of TFETs. The relatively high amplitude of RTS noise in TFETs will have circuit design implications. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3526722] |
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