[摘要]：A novel approach to blend organic source and drain electrodes with semiconducting organic single crystals in field-effect transistors is described. The devices fabricated show a very high performance which is ascribed to a notable reduction of the contact resistance as measured by Kelvin probe microscopy. The average mobility is found to be four-fold that obtained from devices where no interpenetration of the two materials takes place. This work highlights therefore the importance of the contacts in organic field-effect transistors not only in terms of the alignment of the energy levels but also with respect to the interface morphology.
