[摘要]：The authors report on the photo-response characteristics of flexible sensor-transistor circuits (ST-circuits) made with (poly(3-hexylethiophene)/phenyl-C-61-butryic acid methyl ester) (P3HT/PCBM) bulk heterojunction polymer and pentacene-based organic field-effect transistors, which are stacked via poly(dimethylsiloxane) (PDMS) on the plastic substrate. The results indicate that the anode-source current is variable because of both the charge separation of the photogenerated excitons and the accumulated charges at the OFET channel layer. The light dependent photo response (Delta I/I-0) is modulated from 0.47 to 1.9 by the gate-source voltage at the fixed anode-source voltage of the ST-circuits. (C) 2010 American Institute of Physics. [doi:10.1063/1.3530448]
