Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

[摘要]：We have investigated the bilayer structure of binary oxides such as HfOx and ZrOx for applications to resistance memory. The ZrOx/HfOx bilayer structure shows a lower reset current and operating voltage than an HfOx monolayer under dc sweep voltage. Furth

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