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Tunable linear MOS resistors uUsing quasi-floating-gate techniques
作者
Torralba, A. (1); Luján-Martínez, C. (1); Carvajal, Roman G. (1); Galan, J. (2); Pennisi, Melita (3); Ramírez-Angulo, J. (4); López-Martín, Antonio (5)
[摘要]：Abstract:A family of tunable MOS resistors based on quasi-floating-gate (QFG) transistors biased in the triode region is analyzed in this paper. From the study results, a new device that outperforms previous implementations, is presented. By means of a ca
