[摘要]：To enforce perfect c-axis orientation of ZnO epitaxial films grown on a-plane sapphire, we first grew perfectly perpendicularly aligned (i.e., c axis oriented) ZnO nanopillars on such sapphire substrates, and then over-grew these by a closed epitaxial film using a modified chemical vapor deposition process at atmospheric pressure. X-ray diffraction and low temperature photoluminescence measurements confirm the desired epitaxial relationship and very high crystalline quality. This growth scheme is an efficient method to suppress dislocations and polycrystalline growth of ZnO and could work equally well for other heteroepitaxial epilayer/substrate systems. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709430]
