Direct-gap photoluminescence with tunable emission wavelength in Ge1-ySny alloys on silicon

[摘要]：Direct-gap photoluminescence has been observed at room temperature in Ge1-ySny alloys grown on (001) Si substrates. The emission wavelength is tunable over a 90 meV (200 nm) range by increasing the Sn concentration from y=0 to y=0.03. A weaker feature at

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