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Low-temperature conductance oscillations in junctionless nanowire transistors

  作者 Park, JT; Kim, JY; Lee, CW; Colinge, JP  
  选自 期刊  Applied Physics Letters;  卷期  2010年97-17;  页码  172101-172101  
  关联知识点  
 

[摘要]Junctionless nanowire transistors show more marked oscillations conductance oscillations than inversion-mode devices. These oscillations can be observed at higher temperature, drain voltage, and gate voltage than in surface-channel, inversion-mode multiga

 
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