Room temperature gate modulation of electron spin relaxation time in, (110)-oriented GaAs/AlGaAs quantum wells

[摘要]：A (110)-oriented p-i-n structure with GaAs/AlGaAs quantum wells (QWs) was fabricated, and the effect of an applied electric field on the electron spin relaxation time was investigated by utilizing polarization-and time-resolved photoluminescence measureme

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