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Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO3/Si templates

  作者 Gobaut, B; Penuelas, J; Cheng, J; Chettaoui, A; Largeau, L; Hollinger, G; Saint-Girons, G  
  选自 期刊  Applied Physics Letters;  卷期  2010年97-20;  页码  201908-201908  
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[摘要]Integrating III-V semiconductors on Si is one of the major challenges of epitaxial growth and presents important applicative interest. We describe here an approach based on the use of crystalline SrTiO3 (STO)/Si templates. The structural and optical prope

 
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