[摘要]：We investigated the transport properties of [11 (2) over bar0]-gallium nitride (GaN)/gallium oxide (Ga2O3) single nanowire metal-oxide-semiconductor field-effect-transistor grown on (0001) sapphire substrates. With 0.1 mu m gate-length and 60 nm wire-size, the device exhibits maximum transconductance of 85 mu S, saturation current of 105 mu A, and unity current gain bandwidth f(t) at 95 GHz. From a three-dimensional (3D) diffusion-and-drift model analysis, polarization-induced negative space charge of -3 x 10(12) cm(-2) at the back interface of GaN/sapphire, positive space charge of 7 x 10(12) cm(-2) at the inclined semi-polar {1 (1) over bar0 (1) over bar} GaN/Ga2O3 interfaces with screening by two-dimensional electron gas to keep charge neutrality were found responsible for the high-speed transport Characteristics. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3651332]
