High-quality InGaN/GaN heterojunctions and their photovoltaic effects - art. no. 261108

[摘要]：High-quality p-GaN/i-In0.1Ga0.9N/n-GaN heterojunctional epilayers are grown on (0001)-oriented sapphire substrates by metal organic chemical vapor deposition. The Pendellosung fringes around the InGaN peak in high-resolution x-ray diffraction (HRXRD) conf

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