[摘要]：We discovered that perovskite (Ba,La) SnO3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba0.98La0.02SnO3 crystals with the n-type carrier concentration of similar to 8-10 x 10(19) cm(-3) is found to be similar to 103 cm(2) V-1 s(-1) at room temperature, and the precise measurement of the band gap Delta of a BaSnO3 crystal shows Delta = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba, La) SnO3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709415]
