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Eu luminescence center created by Mg codoping in Eu-doped GaN

  作者 Lee, DG; Nishikawa, A; Terai, Y; Fujiwara, Y  
  选自 期刊  Applied Physics Letters;  卷期  2012年100-17;  页码  171904-171904  
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[摘要]We investigated the photoluminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy. Some emission due to intra-4f shell transition of D-5(0)-F-7(2) in Eu3+ ions in a center with Eu and Mg was observed together with typical Eu emission. The peak intensity of the Eu-Mg emission was about five times higher than that of the typical Eu emission. The Eu-Mg emission exhibited a maximum at around 180 K, while the typical Eu emission intensity decreased monotonically with increasing temperature. It was found that only one type of Eu-Mg center contributed to the enhanced intensity up to 180 K. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704920]

 
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