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[摘要]：Hydrogen sensor working at room and 40 degrees C temperatures made of porous silicon covered by the TiO (2-x) or ZnO < Al > thin Him was realized. Porous silicon layer was formed by electrochemical anodization on a p- and n-type Si surface. Thereafter, n-type TiO2-x, and ZnO < Al > thin films were deposited onto the porous silicon surface by electron-beam evaporation and magnetron sputtering, respectively. Platinum catalytic layer and An electric contacts were for further measurements deposited onto obtained structures by ion-beam sputtering. The sensitivity of manufactured structures to 1000-5000 ppm of hydrogen, propane-butane mixture, and humidity wits studied. Sensitivity or obtained structures was determined as ratio of the resistivity of structures in the presence of investigated gas to that in air. Results of sensitivity measurements showed that it is possible to realize a hydrogen nanosensor, resistivity of which can be decreased up to 2.5 times at room temperature and four times at 40 degrees C for the Pt/TiO2-x/PS structure, as well as two times for the Pt/ZnO < Al >/PS structure at 40 degrees C at 5000 ppm hydrogen concentration, respectively. Both structures have the recovery and response time of approximately 20 s and rather high durability and selectivity to hydrogen gas. |
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