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Characterization of the Noise Parameters of SiGe HBTs in the 70-170-GHz Range

作者	Yau, KHK; Chevalier, P; Chantre, A; Voinigescu, SP

选自	期刊 IEEE Transactions on Microwave Theory and Techniques; 卷期 2011年59-8; 页码 1983-2000

关联知识点

[摘要]：Noise parameter (F-min, Z(opt), and R-n) measurements of SiGe HBTs are provided for the first time in the 70-170-GHz range. In the W-band, this is accomplished by integrating on a single chip a source impedance tuner with the device-under-test and a low-n
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