Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 A degrees heterojunction bipolar transistors

[摘要]：This article describes a comparative study of Ti/Au, Ti/Pd/Au, Ti/Pt/Au, Mo/Au, Mo/Pt/Au, and Pd/Mo/Pt/Au Ohmic contacts to both n- and p-In0.65Ga0.35Sb. For In0.65Ga0.35Sb:Te doped to 2x10(18) cm(-3), specific contact resistivities rho(c) below 2x10(-6)

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