【文章名】Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
个性化文献订阅>期刊> Journal Of Vacuum Science & Technology B
Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
[摘要]:Strained silicon techniques have become an indispensable technology feature, enabling the momentum of semiconductor scaling. Embedded silicon-germanium (eSiGe) is already widely adopted in the industry and delivers outstanding p-metal oxide semiconductor