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Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants

  作者 Merkulov, A; Peres, P; Choi, S; Horreard, F; Ehrke, HU; Loibl, N; Schuhmacher, M  
  选自 期刊  Journal Of Vacuum Science & Technology B;  卷期  2010年28-1;  页码  C1C48-C1C53  
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[摘要]This article presents investigation on secondary ion mass spectroscopy (SIMS) profile quantification for ultrashallow profiles. New configuration for the cesium and oxygen sources on the CAMECA IMS Wf tool-provides SIMS profiling capability at 150 eV impa

 
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