【文章名】Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon
个性化文献订阅>期刊> Journal Of Vacuum Science & Technology B
Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon
作者
Pepponi, G; Giubertoni, D; Bersani, M; Meirer, F; Ingerle, D; Steinhauser, G; Streli, C; Hoenicke, P; Beckhoff, B
[摘要]：Dopant depth profiling and dose determination are essential for ultrashallow junction technology development. However they pose a challenge to the widely used dynamic secondary ion mass spectroscopy (SIMS) technique that suffers uncertainties due to an in
