Impact of << 110 >> uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors

[摘要]：This letter reports on a study of the impact of << 110 >> uniaxial strain on the characteristics of InGaAs high electron mobility transistors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrin

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