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Silicon emitter for shortwave infrared (1.6-3 mu m) band by light down-conversion

  作者 Malyutenko, VK; Bogatyrenko, VV; Tykhonov, AM  
  选自 期刊  Applied Physics Letters;  卷期  2010年97-21;  页码  211104-211104  
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[摘要]No silicon-based light emitting diodes exist for shortwave infrared (1.6-3.0 mu m) band due to bandgap limitations imposed on luminescence wavelengths. To alleviate this problem, we propose a photonic device in which below-bandgap radiation comes as the r

 
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