[摘要]：A design for a heteroepitaxial junction by the way of one-dimensional wurzite on a two-dimensional spine] structure in a low-temperature solution process was introduced, and its capability was confirmed by successful fabrication of a diode consisting of p-type cobalt oxide (Co3O4) nanoplate/n-type zinc oxide (ZnO) nanorods, showing reasonable electrical performance. During thermal decomposition, the 300 rotated lattice orientation of Co3O4 nanoplates from the orientation of beta-Co(OH)(2) nanoplates was directly observed using high-resolution transmission electron microscopy. The epitaxial relations and the surface stress-induced ZnO nanowire growth on Co3O4 were well supported using the first-principles calculations. Over the large area, (0001) preferred oriented ZnO nanorods epitaxially grown on the (111) plane of Co3O4 nanoplates were experimentally obtained. Using this epitaxial p-n junction, a diode was fabricated. The ideality factor, turn-on voltage, and rectifying ratio of the diode were measured to be 2.38, 2.5 V and 10(4), respectively.
