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Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors (vol 99, 072117, 2011) - art. no. 259901
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作者 |
Frazzetto, A; Giannazzo, F; Fiorenza, P; Raineri, V; Roccaforte, F |
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选自 |
期刊 Applied Physics Letters; 卷期 2011年99-25; 页码 59901-59901 |
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