[摘要]：Molecular beam epitaxy (MBE) was used to grow ridge-waveguide distributed feedback (DFB) lasers for uncooled coarse wavelength division multiplexing applications. The lasers covered a wavelength range from 1270 to 1610 nm and a temperature range of at least -20 to 85 degrees C. The MBE growth includes atomic hydrogen cleaning of exposed InGaAsP surfaces for regrowth over a DFB grating. The devices show good performance over the whole wavelength range, with 85 degrees C median threshold currents from 25 to 40 mA depending on the wavelength. Accelerated lifetime testing indicates minimal degradation with TO packaged devices showing less than a 1% increase in operating current after 4000 h at 85 degrees C. (C) 2008 American Vacuum Society.
