GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier

[摘要]：We investigate the spin-dependent transport of GaMnAs-based magnetic tunnel junctions (MTJs) containing a paramagnetic AlMnAs barrier with various thicknesses. The barrier height of AlMnAs with respect to the Fermi level of GaMnAs is estimated to be 110 m

[全文传递流程]：

一般上传文献全文的时限在1个工作日内