[摘要]：The enhancement of the charge injection process by the insertion of an ultrathin (similar to 1 nm) contact oxide interlayer (COI) at the metal/organic material interface in organic field effect transistors (OFETs) is reported. Six different oxides were used as COI, and Al2O3 was found to exhibit the highest OFET mobility with a reduction in the average contact resistance (R-c) from 19.9 to 1.9 k Omega.cm. Photoelectron yield spectroscopy analysis revealed that the insertion of COI increases the work function of an Au contact and reduces the charge injection barrier at the interface, which lowers R-c and, therefore, results in enhanced device performance. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673842]
