[摘要]：The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 mu m. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibrated reactive ion etch lag, the two depths are implemented using a single mask and etching process. The measured converter loss is -0.7 dB and the 3 dB bandwidth is 26 nm. (C) 2012 Optical Society of America
