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Macroscopic and microscopic electrical characterizations of high-k ZrO2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures - art. no. 01AC02

  作者 Martin, D; Grube, M; Weinreich, W; Muller, J; Wilde, L; Erben, E; Weber, WM; Heitmann, J; Schroder, U; Mikolajick, T; Riechert, H  
  选自 期刊  Journal Of Vacuum Science & Technology B;  卷期  2011年29-1;  页码  AC102-AC102  
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[摘要]In order for sub-10 nm thin films of ZrO2 to have a dielectric constant larger than 30 they need to be crystalline. This is done by either depositing the layer at higher temperatures or by a postdeposition annealing step. Both methods induce high leakage

 
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