Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology - art. no. 01A301

[摘要]：In this study, the authors present results on the structural, chemical, and electrical characterization of HfO2 thin layers on 300 mm Si wafers. The layers were prepared by atomic layer deposition using a liquid delivery system technology for metal organi

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