Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography - art. no. 011034

[摘要]：We describe methods to fabricate extreme ultraviolet lithography (EUVL) absorber mask patterns by atomic force microscope (AFM) lithography and inductively coupled plasma (ICP) etching. AFM lithography, based on anodization and cross-linking polymer resis

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