Hybrid Si Nanowire/Amorphous Silicon FETs for Large-Area Image Sensor Arrays

[摘要]：Silicon nanowire (SiNW) field-effect transistors (FETs) were fabricated from nanowire mats mechanically transferred from a donor growth wafer. Top- and bottom-gate FET structures were fabricated using a doped a-Si:H thin film as the source/drain (s/d) con

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