[摘要]：The multibeam charged particle nanopatterning tool has been used to fabricate template structures with 10 keV Ar+ ion beam sputtering in Si. Trench array structures of 130 nm width, 280 nm depth and 80 degrees sidewall angle have been cross sectioned and examined by the scanning electron microscopy. The experiments have been compared with the sputter simulation code IonShaper (R). A double Lorentz tool point spread function with 21.5 nm full width at half-maximum has been used for the simulations. For different layout geometries but identical simulation parameters, the simulation results are in good agreement with the experiments.
