| |
[摘要]：An array of highly disordered i-ZnO:Al(3%) random cavities, which have 1 mu m width, 150 nm thickness, and 2 mm length, is sandwiched between n-ZnO:Al(5%) and p-GaN/sapphire substrate to form an array of heterojunctions. The random cavities, which are electrically isolated and optically coupled with the adjacent random cavities, are laterally separated by a 1 mu m wide Al2O3 dielectric insulator. Stable single-mode operation is observed from the laser diode array under high electrical pumping (i.e., >6 x threshold current) at room temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3527922] |
|
