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[摘要]：We report the synthesis, fabrication, and testing of a 320 x 256 focal plane array (FPA) of back-illuminated, solar-blind, p-i-n, AlxGa1-xN-based detectors, fully realized within our research laboratory. We implemented a pulse atomic layer deposition technique for the metalorganic chemical vapor deposition growth of thick, high-quality, crack-free, high Al composition AlxGa1-xN layers. The FPA is hybridized to a matching ISC 9809 readout integrated circuit and operated in a SE-IR camera system. Solar-blind operation is observed throughout the array with peak detection occurring at wavelengths of 256 nm and lower, and falling off three orders of magnitude by similar to 285 nm. By developing an opaque masking technology, the visible response of the ROIC is significantly reduced; thus the need for external filtering to achieve solar- and visible-blind operation is eliminated. This allows the FPA to achieve high external quantum efficiency (EQE); at 254 nm, average pixels showed unbiased peak responsivity of 75 mA/W, which corresponds to an EQE of similar to 37%. Finally, the uniformity of the FPA and imaging properties are investigated. (C) 2012 Optical Society of America |
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