Semipolar {n(n)over-bar01} InGaN/GaN ridge quantum wells (n=1-3) fabricated by a regrowth technique

[摘要]：Semipolar {n (n) over bar 01} InGaN/GaN quantum wells (QWs) (n = 1 3) are fabricated on top of GaN microstructures, which consist of semipolar {1 (1) over bar 01} facets. Semipolar planes are obtained via regrowth of three- dimensional structures on ( 0001) GaN templates under controlled growth conditions. Compared to QWs on {1 (1) over bar 01} facets, {n (n) over bar 01} ridge QWs show an intense emission at similar to 440 nm. Time resolved photoluminescence reveals that the radiative lifetime of excitons in {n (n) over bar 01} InGaN ridge QWs at 13K is 310 ps, which is comparable to that in {1 (1) over bar 01} QWs. The estimated internal quantum efficiency at room temperature is as high as 57%. (C) 2012 American Institute of Physics. [http://dx. doi. org/10.1063/1.4704779]

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