【文章名】Irregular spectral position of E parallel to c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2 - art. no. 232114
Irregular spectral position of E parallel to c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2 - art. no. 232114
作者
Mauder, C; Lutsenko, EV; Rzheutski, MV; Reuters, B; Zubialevich, VZ; Pavlovskii, VN; Yablonskii, GP; Heuken, M; Kalisch, H; Vescan, A
[摘要]：Polarized temperature dependent photoluminescence (PL) and room temperature (RT) photocurrent spectra of m-plane InGaN/GaN multiple quantum wells grown on LiAlO2 with In content x(In) = 5%-30% were studied. As expected, higher x(In) leads to larger strain in the wells and enhances both the splitting between the two highest valence subbands and the RT PL degree of polarization. At low temperatures, an irregular red-shift of the PL component with polarization E parallel to c relative to E perpendicular to c is observed, which is ascribed to the contribution of recombination of holes localized at band tails within the second highest valence subband. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3667199]
