[摘要]：This paper presents a new type of CMOS time-of-flight (TOF) range image sensor using single-layer gates on field oxide structure for photo conversion and charge transfer. This simple structure allows the realization of a dense TOF range imaging array with 15 x 15 mu m(2) pixels in a standard CMOS process. Only an additional process step to create an n-type buried layer which is necessary for high-speed charge transfer is added to the fabrication process. The sensor operates based on time-delay dependent modulation of photocharge induced by back reflected infrared light pulses from an active illumination light source. To reduce the influence of background light, a small duty cycle light pulse is used and charge draining structures are included in the pixel. The TOF sensor chip fabricated measures a range resolution of 2.35 cm at 30 frames per second and an improvement to 0.74 cm at three frames per second with a pulsewidth of 100 ns.
